Abstract
In this paper, we report on anisotropic transport properties of strained germanium (sGe) quantum wells grown on Si (001) substrates with p-type doping beneath the sGe channel. Mobility measurements were made along orthogonal [110] directions. The level of measured resistivity anisotropy in the 110 ½and ½110orientations was found to vary between 2 and 9 for different samples. This corresponds to an actual mobility anisotropy ratio of between 1.3 and 2, values that are significantly higher than previously found for sGe. From modeling of the low temperature (12K) mobility, using the relaxation time approach, the anisotropy in mobility was accounted for by a difference in interface roughness scattering between the two orientations. For the 110 ½orientation, a step height of D¼0.28nm and interface roughness periodicity of k¼7nm were found while for the ½110orientation, k reduced to 4nm and D increased to 0.42nm. High-resolution X-ray diffraction and transmission electron microscopy confirmed a 1off-cut in the wafer towards the ½110direction. VC 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License