Abstract
The continues demand for Photovoltaic device improvement has led us to search for new sources of photovoltaic action. For that, this paper proves the existence of other sources for photovoltaic action in addition to the main source which is the built-in electrostatic fild generated through controlled composition gradient These new sources are uncovered through mathematical examination of a specifi material system followed by the construction of four-layer p-type semi-conducting materials (i.e., without pn-junction formation). First three layers of this specifi material system are fabricated with AlxGα1-xAs with diffrent Aluminum fractions, while the fourth layer is fabricated with Ge with a diffsed back surface fild (BSF) layer to reduce surface recombination velocities (SRV). The complete structure is analyzed using the PC-1D simulation softare, and it shows that the junctionless structure possesses the photovoltaic action with low performance.