Abstract
This paper, emphasis different growth techniques of two-dimensional hole gas of strained germanium (sGe) heterostructure, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). sGe heterostructure has become an important material as a replacement material to Silicon in P-type devices because of its higher hole mobility and lower effective mass. Researchers study this material in terms of electrical and spintronic devices according to technology demands for devices with higher efficiency and low power consumption. High hole mobility up to 1×10cm/Vs at temperature of 1.5 K has been reported for normal structure declaring high quality samples with low density dislocation and low interface roughness. arabic 14 English 105