Abstract
In this work, a hole mobility of one million in germanium is reported. This extremely high value of 1.1 x 106 cm2V-1s-1 at a carrier sheet density of 3.0 x 10 11 cm -2 is observed in a strained Ge quantum well structure grown by reduced-pressure chemical vapor deposition (RP-CVD) and is nearly an order of magnitude higher than previously reported values.