Abstract
In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole gas. The extremely high hole mobility of 1.1 × 106 cm2 V-1 s-1 at a carrier sheet density of 3 × 1011 cm-2 was observed at 12 K. This mobility is nearly an order of magnitude higher than any previously reported. From the structural analysis of the material and mobility modeling based on the relaxation time approximation, we attribute this result to the combination of a high purity Ge channel and a very low background impurity level that is achieved from the reduced-pressure chemical vapor deposition growth method.