413E : ٍSolid state physics II

Department

Department of

Academic Program

Bachelor in Physics

Type

Elective

Credits

02

Prerequisite

Overview

Study of general properties of semiconductors and semiconductor models, properties determination of charge carriers of semiconductor doping, interpretation of charge carrier statistics, concentrations of charge carriers, definition of generation, drift-diffusion, and recombination of charge carriers, description of p-junction equations at thermal equilibrium, p-n junction polarized with bias potential.

Intended learning outcomes

At the end of the course, the student should be able to:

1. Know the general properties of semiconductors - semiconductor study models.

2. Determines the properties of charge carriers Semiconductor grafting.

3. Explains charge carrier statistics for charge carrier concentrations.

4. Explains drift, diffusion, generation and recombination of charge carriers.

5. Describes the equations of state of the p-n junction at thermal stability and the p-n junction polarized with a bias potential.

6. Uses different distributions (Maxwell-Boltzmann, Fermi-Dirac, Bose-Einstein's law of distribution).

Teaching and learning methods

· Lectures.

· Research.

· Tutorial.

Methods of assessments

The methods of evaluating students in this course are distributed as follows:

o Semester work (40 marks) is divided as follows:

· First written exam (objective questions and problem) (15 marks).

· Second written exam (objective questions and problem) (15 marks).

· Scientific activities (e.g. weekly tests, reports discussion) (10 marks) .

o Final: written exam (60 marks).

Course content

Scientific subject	Week
Study of general properties of semiconductors - semiconductor study models.	1-2
Properties of charge carriers - alloying (grafting) semiconductors.	3-4
First Exam	5
Charge carrier statistics, charge carrier concentrations,.	6-7
Drift-diffusion, generation and recombination of charge carriers	8-9
Second Exam	10
Ages of charge carriers - equations of state.	11-12
P-N junction at thermal stability - The P-N junction is polarized with a siding voltage.	13-14
Final Exam	15

References

Title	Publisher	Edition	Author	location
Rapporteur notes	-		Lecturer	Lecturer
Semiconductor Physics & Devices	Mc Graw Hill	2011	Donald A. Neamen	Internet
Semiconductors	Dar Alfikr Al-Arabi	2002	Sharif A. Khayri Hasan Hussain	College library

General Chemistry I (.CH101)
Fundamentals of Education (EPSY101)
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General Psychology (EPSY 100)
Introduction to Mechanics (PH101)
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Arabic language 1 (AR103)
Quranic Studies 1 (AR101)
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Arabic language 2 (AR104)
General Mathematics 2 (MM112)
General Teaching Methods (EPSY 201)
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Mechanics I (PH203)
Mathematical Physics I (PH201)
Lab. Physics 2 (Electricity, Sound and Light) (PH207L)
Principles of statistics (ST100)
General English1 (EN100)
HOSTINGARABIC3 (AR105)
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Basics Of Curriculums (EPSY 202)
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General English2 (EN101)
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Thermodynamics (PH204)
Electromagnetic theory (PH303)
Moderen (Atomic) Physics (PH307)
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Quranic studies2 (AR102)
Lab. Physics 3 (AC circuits) (PH305L)
HOSTINGARABIC4 (AR106)
General chemistry II practical (CH102P.)
Computer 2 (CS101)
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Nuclear Physics I (PH403)
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Advanced Lab (Electrons) (PH306L)
Physical Optics (PH304)
Mechanics III (PH301)
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Quantum Mechanics (PH401)
Statistical Physics (PH402)
Advanced Lab. (Nuclear Physics) (PH404L)
Advanced Lab. (Solid-State Physics) (PH406L)
Teaching Practice (EPSY 402)
Solar Energy (PH409E)
Laser and Applications (PH410E)
Nuclear Physics II (PH411E)
ٍSolid state physics II (413E)